VRF141G 28v, 300w, 175mhz the VRF141G is designed for broadband commercial and military applications at frequencies to 175mhz. the high power, high gain, and broadband perfor- mance of this device make possible solid state transmitters for fm broadcast or tv channel frequency bands. features ? improved ruggedness v (br)dss = 80v ? 300w with 14db typical gain @ 175mhz, 28v ? excellent stability & low imd ? common source con guration ? rohs compliant ? 5:1 load vswr capability at speci ed operating conditions ? nitride passivated ? refractory gold metallization ? high voltage replacement for mrf141g symbol parameter VRF141G unit v dss drain-source voltage 80 v i d continuous drain current @ t c = 25c 40 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 500 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 80 90 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) .9 1.0 i dss zero gate voltage drain current (v ds = 60v, v gs = 0v) 1.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 5.0 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4953 rev a 5-2009 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.35 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed.
0 5 10 15 20 25 0 2 4 6 8 10 12 0 10 20 30 40 50 60 0 5 10 15 20 25 VRF141G dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 400 pf c oss output capacitance v ds = 28v 375 c rss reverse transfer capacitance f = 1mhz 50 functional characteristics symbol parameter min typ max unit g ps f = 175mhz,- v dd = 28v, i dq = 500ma, p out = 300w 12 14 db d f = 175mhz, v dd = 28v, i dq = 500ma, p out = 300w 45 55 % f = 175mhz, v dd = 28v, i dq = 500ma, p out = 300w 5:1vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4953 rev a 5-2009 1 10 100 1 10 100 10 100 1,000 10,000 0 10 20 30 40 50 60 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (f) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 5v 6v 7v 8v 9v 10v 14v v gs , drain-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax v gs = 4v
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration typical performance curves VRF141G 050-4953 rev a 5-2009 figure 7. 175 mhz t est circuit c1 - arco 402, 1.5 20 pf c2 - arco 406, 15 115 pf c3, c4, c8, c9, c10 - 1000 pf chip c5, c11 - 0.1 m f chip c6 - 330 pf chip c7 - 200 pf and 180 pf chips in parallel c12 - 0.47 m f ceramic chip, kemet 1215 or equivalent c13 - arco 403, 3.0 35 pf l1 - 10 t urns awg #16 enameled wire, close wound, 1/4, i.d. l2 - ferrite beads of suitable material for 1.52.0 m h total inductance r1 - 100 ohms, 1/2 w r2 - 1.0 kohm, 1/2 w unless otherwise noted, all chip capacitors are atc type 100b or equivalent. t1 - 9:1 rf transformer. can be made of 1518 ohms semirigid co-ax, 62 90 mils o.d. t2 - 1:9 rf t ransformer . can be made of 1518 ohms semirigid co-ax, 70 90 mils o.d. , board material - 0.062 fiberglass (g10), 1 oz. copper clad, 2 sides, e r = 5 note: for stability, the input transformer t1 must be loaded with ferrite toroids or beads to increase the common mode inductance. for operation below 100 mhz. the same is required for the output transformer. see pictures for construction details. - dut connections to low impedance windings 9:1 impedance ratio 4:1 impedance ratio high impedance windings center tap center tap 28v output l1 l2 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 t2 c13 bias 0-6v r1 r2 t1 input +
VRF141G package dimensions (inches ) all dimensions are .005 hazardous material warning the ceramic portion of the device between leads and mounting flange is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. .435 .225 0.200 0.400 0.390 1.100 1.340 .005 .210 .860 .107 .060 .065 rad 2 pl 1 3 2 4 5 pin 1. drain 2. drain 3. gate 4. gate 5. source microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 050-4953 rev a 5-2009
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